Modeling of High Voltage AlGaN/GaN HEMT
Device analysis tool for high breakdown voltage AlGaN/GaN HEMT device structure.
Simulation of AlGaN/GaN HEMT with a magnesium layer structure that has a high breakdown voltage. By optimizing the length of the magnesium (Mg) layer and its doping density, a breakdown voltage of 900V is achieved. (Specifically illustrating the length of the magnesium layer, doping density, and the length of the drift region.) The magnesium layer is effective in enhancing the breakdown voltage of AlGaN/GaN devices.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
